Dr. Azza Hadj Youssef

Phone: +1 514-228-6983
Fax: +1 450-929-8102
E-mail: hadjyoussef.azza@emt.inrs.ca
Office: 108

Institut national de la recherche scientifique
1650, Blvd. Lionel-Boulet
Varennes (QC) J3X 1S2 CANADA

Research topic

Comprehension and quantification of the flexoelectric effect in strontium titanate thin film eleborated by magnetron sputtering

Fields of interest

  • Sputtering deposition
  • X-ray diffraction
  • Raman spectroscopy
  • Atomic force microscopy

Education

PhD in energy and material sciences (INRS-EMT, Varennes, Quebec, Canada)

Master's degree in physics and chemistry of materials in Faculty of sciences of Monastir, Tunisia

Articles

C. Amaechi, G. Kolhatkar, A. Hadj Youssef, D. Rawach, S. Sun, and A. Ruediger, “B-site modified photoferroic Cr 3+ -doped barium titanate nanoparticles: microwave-assisted hydrothermal synthesis, photocatalytic and electrochemical properties,” RSC Adv., vol. 9, no. 36, pp. 20806–20817, Jul. 2019.

Kolhatkar, M. Nicklaus, A. Hadj Youssef, C. Cojocaru, M. Rivard, A. Merlen, F. Légaré, and A. Ruediger. “Second Harmonic Generation Investigation of Symmetry Breaking and Flexoelectricity Induced by Nanoindentations in SrTiO3”. Advanced Functional Materials. 2019, 1901266

A. Hadj Youssef, G. Kolhatkar, A. Merlen, R. Thomas, A. Ruediger. “Surface preparation and the evolution of atomically flat step terrace morphology of MgO single crystals,” AIP Adv., vol. 8, no. 9, p. 095025, Sep. 2018.

A. Hadj Youssef, FA. Vargas, I. Amaechi, A. Sarkissian, A. Merlen, R. Thomas, A. Ruediger. “Impact of negative oxygen ions on the deposition processes of RF-magnetron sputtered SrTiO3 thin films,” Thin Solid Films, vol. 661, pp. 23–31, Sep. 2018.

I.C. Amaechi, A. Hadj Youssef, D. Rawach, JP. Claverie, S. Sun, A. Ruediger. “Ferroelectric Fe-Cr Co-Doped BaTiO3 Nanoparticles for the Photocatalytic Oxidation of Azo Dyes,” ACS Appl. Nano Mater., p. acsanm.9b00336, Apr. 2019.

F. Ambriz-Vegas, G. Kolhatkar, M. Broyer, A. Hadj Youssef, R.Nouar, A. Sarkissian, R. Thomas, C.Gomez Yanez, M.A Gauthier, and A. Ruediger , (2017), “A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction,” ACS Appl. Mater. Interfaces, vol. 9, no. 15, pp. 13262–13268, Apr. 2017.

T. Dequivre, G.Kolhatkar. A. Hadj Youssef, Le,X.T. , Brisard, G.M, Ruediger,A, Charlebois., S.A. “Wet Metallization of High Aspect Ratio TSV Using Electrografted Polymer Insulator to Suppress Residual Stress in Silicon,” IEEE Trans. Device Mater. Reliab., vol. 17, no. 3, pp. 514–521, Sep. 2017.

N. Sacré, M. Duca, S. Garbarino, R. Imbeault, A. Wang, A. Hadj Youssef, J Galipaud, G. Hufnagel, A. Ruediger, L. Roué, and D. Guay “Tuning Pt-Ir Interactions for NH 3 Electrocatalysis,” ACS Catal., vol. 8, no. 3, pp. 2508–2518, Mar. 2018.

Patent

A. Ruediger, F. Ambriz-Vargas, G. Kolhatkar, H. Hadj Youssef, M. A. Gauthier, R. Thomas, A. Sarkissian (2017) U.S. Patent ref.:773/14448.113 - "Ferroelectric Tunnel Junction and Method of Fabrication Thereof"

Conference

Azza Hadj Youssef, F. Ambriz, R. Nouar, A. Sarkissian, R. Thomas and A. Ruediger, Re-Sputtering effect in on-axis RF-magnetron sputtered of SrTiO3 thin films from single stoichiometric target and process optimization to obtain stoichiometric films, Poster presentation at colloque LN2, July 10-13-2016, Québec , Canada (poster)

Azza Hadj Youssef, F. Ambriz, R. Nouar, A. Sarkissian, R. Thomas and A. Ruediger, Re-Sputtering effect in on-axis RF-magnetron sputtered of SrTiO3 thin films from single stoichiometric target and process optimization to obtain stoichiometric films, Poster presentation at colloque Plasma Québec June 04-06-2016, Montréal Québec , Canada (poster)

Azza Hadj Youssef, G. Kolhatkar, I. C. Amaechi, A. Merlen et A. Ruediger “Modulation d’une large reconstruction thermique de couche mince de titanate de strontium épitaxiées sur MgO (100) “.Forum sonde locale 2019, carry le rouet, France (presentation)

Azza Hadj Youssef, Chahinez Dab, Jiawei Zhang, Gitanjali Kolhatkar, Alexandre Merle Andreas Ruediger. “IR-active modes detected by tip-enhanced Raman spectroscopy in SrTiO3 hetero-epitaxial nanostructures: field gradient or strain gradient contribution?” 2018 MRS Fall Meeting, November 25- 30, 2018, Boston, Massachusetts (poster)

Gaëtan Buvat, Azza Hadj Youssef, Andreas Ruediger, Sébastien Garbarino and Daniel Guay “Revisiting iridium-based oxide structure through heteroepitaxy by pulsed laser deposition for the oxygen evolution reaction”. 69th Annual ISE Meeting, Bologna, Italy 2018.

A. Ruediger, F. Ambriz-Vargas, G. Kolhatkar, Azza Hadj Youssef, A. Sarkissian, D. Drouin, S. Urquhart, R. Thomas (2018). “CMOS-compatible ferroelectric tunnel junctions based on Hf0.5Zr0.5O2” IEEE-ISAF conference, Hiroshima, Japan (invited talk).

Gitanjali Kolhatkar, Fabian Ambriz-Vargas, Bernhard Huber, Azza Hadj Youssef, Andranik Sarkissian, Reji Thomas, Andreas Ruediger. « CMOS-compatible Hf0.5Zr0.5O2 ferroelectric tunnel junctions » European Advanced Materials Congress (EAMC) 2018, Stockholm, Sweden.

A. Ruediger, Fabian Ambriz Vargas, Azza Hadj Youssef, Gitanjali Kolhatkar1, Marc Gauthier, Reji Thomas, Rafik Nouar, Andranik Sarkissian, Carlos Gomez-Yanez, Dominique Drouin, Stephen Urquhart. « CMOS compatible Hf0.5Zr0.5O2 ferroelectric tunnel junctions (plenary) » International Symposium on Functional Materials (ISFM) 2018, Chandigarh, India.

Raul Irving Arriaga Benitez, Rajesh Katoch, Yoandris L. González Hernández, Andreas Dörfler, Fabian Ambriz Vargas, Azza Hadj Youssef, Gitanjali Kolhatkar, Marc Andre Gauthier, Reji Thomas, Claude Côté, Andranik Sarkissian, Carlos Gómez Yáñez, Abdelouadoud El Mesoudy, Dominique Drouin, Sam Netzke, stephen urquhart, Andreas Ruediger. “CMOS compatible HfxZr1-xO2 ferroelectric tunnel junctions”. IEEE ISAF-ICE-EMF-IWPM-PFM 2019, Lausanne, Switzerland.

A. Ruediger, Fabian Ambriz Vargas, Azza Hadj Youssef, Gitanjali Kolhatkar, Raul Arriaga Benitez, Yandris Gonzalez Hernandez, Marc Gauthier, Reji Thomas, Rafik Nouar, Andranik Sarkissian, Carlos Gomez-Yanez, Dominique Drouin, Stephen Urquhart « CMOS-compatible ferroelectric tunnel junction memories based on Hf0.5Zr0.5O2 » UMI 2018.