Phone: +1 438-410-3540
Fax:     +1 450-929-8102
E-mail: samir.tilouche@emt.inrs.ca
Office:  2002

Institut national de la recherche scientifique
1650, Blvd. Lionel-Boulet
Varennes (QC) J3X 1S2 CANADA

Research topic 

Molecular Beam Epitaxy (MBE) growth and characterization of III-V spintronic and optoelectronic devices

Fields of interest

• Molecular Beam Epitaxy
• Structural characterization
• Atomic Force Microscopy
• Raman spectroscopy
• Time-Resolved Photoluminescence

Education

Master degree in physics of materials at Higher Institute of Science and Technology of Hammam Sousse, University of Sousse - Tunisia.

Publications

Conferences

S. Tilouche, J. Hellara, L. Sfaxi, R. M’Ghaieth, Effect of Mn concentration and strain on the band structure of GaMnAs: Theoretical study, Oral presentation at NS&t’17 Humboldt-Kolleg, Nanoscale Science and Technology, 27-29
October 2017, Tunisia.